| PART |
Description |
Maker |
| DWBW2F4S02 DWBW2F4S12 DWBW2FTS32 DWBW3FTS32 DWBW3F |
Bandsplitters 200 GHz Channel Spacing
|
JDS Uniphase Corporation
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MMFT107T1D MMFT107T3 MMFT107T1 MMFT107 MMFT107T1-D |
Power MOSFET 250 mA, 200 Volts N-Channel SOT-223
Power MOSFET 250 mA / 200 Volts
Power MOSFET 250 mA, 200 Volts 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
ONSEMI[ON Semiconductor]
|
| NC504SM-28 |
Surface Mount Noise Sources 200 kHz to 3.5 GHz
|
Micronetics, Inc.
|
| NC504SM-15 |
Surface Mount Noise Sources 200 kHz to 3.5 GHz
|
Micronetics, Inc.
|
| NC502SM-12 |
Surface Mount Noise Sources 200 kHz to 1 GHz
|
Micronetics, Inc.
|
| NC502SM-28 |
Surface Mount Noise Sources 200 kHz to 1 GHz
|
Micronetics, Inc.
|
| AGR26125E AGR26125EF AGR26125EU |
125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| EVAL-ADG936EB ADG936 ADG936BCP ADG936BCP-500RL7 AD |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT 宽带4千兆赫，36千兆赫的CMOS 1.65 V分贝.75 V的隔离，双路SPDT
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20
|
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| PE2CP1069 |
Low PIM Directional 20 dB N Coupler To 2.7 GHz Rated to 200 Watts
|
Pasternack Enterprises,...
|
| IRFBC40 |
CAP CER 1000PF 100V 20% X7R 0603 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
|
Intersil, Corp.
Intersil Corporation
|
| FRK9260R FRK9260D FRK9260H |
26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs 26 A, 200 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
26A/ -200V/ 0.200 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
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